Alloy Sputtering Target In Semiconductor Manufacturing

- Jun 22, 2017 -

  Application of Ni - Pt Alloy Sputtering Target in Semiconductor Manufacturing

  At present, the main method of preparing nickel-platinum silicide film is to first form an ion implantation layer in the silicon region of the semiconductor substrate, and then prepare a layer of silicon epitaxial layer on it,Alloy Sputtering Target followed by sputtering on the surface of the silicon epitaxial layer by magnetron sputtering A layer of NiPt film, and finally through the annealing process to form nickel platinum silicide film.

  Nickel Platinum Silicide Films in Semiconductor Manufacturing Applications:

  1. Application in Schottky Diode Manufacturing: A typical application of nickel-platinum silicide films in semiconductor devices is Schottky diodes. With the development of Schottky diode technology, metal silicide - silicon contact has replaced the traditional metal - silicon contact, to avoid the surface defects and contamination, reducing the impact of the surface state, improve the positive characteristics of the device, To the pressure, reverse energy impact, high temperature, anti-static, anti-burn ability. Nickel platinum silicide is the ideal Schottky barrier contact material, on the one hand nickel platinum alloy as a barrier metal, with good high temperature stability; the other hand, through the alloy composition ratio changes to achieve the barrier level Adjustment. The method is prepared by sputtering the nickel-platinum alloy layer on the N-type silicon semiconductor substrate by magnetron sputtering and vacuum annealing for about 30 minutes in the range of 460-480 DEG C to form the NiPtSi-Si barrier layer. Usually also need to sputter NiV, TiW and other diffusion barrier, blocking the interdiffusion between the metal, improve the device's anti-fatigue performance.

  2. Applications in semiconductor integrated circuits: Nickel-platinum silicides are also widely used in the VLSI microelectronic devices in the source,Alloy Sputtering Target drain, gate and metal electrode contact. At present, Ni-5% Pt (mole fraction) has been successfully applied to 65nm technology, Ni-10% Pt (mole fraction) applied to 45nm technology. With the further reduction of the linewidth of the semiconductor device, it is possible to further improve the Pt content in the nickel-platinum alloy to prepare the NiPtSi contact film. The main reason is that the increase of the Pt content in the alloy can improve the high temperature stability of the film and improve the interface Appearance, reduce the invasion of defects.Alloy Sputtering Target The thickness of the nickel-platinum alloy film layer on the surface of the corresponding silicon device is usually about 10 nm, and the method used to form the nickel-platinum silicide is one or more steps. The temperature is in the range of 400 to 600 ° C for 30 to 60 s The

  In recent years, the researchers in order to reduce the overall resistance of nickel-platinum silicide, IBM's patented two-step manufacturing NiPtSi thin film: the first step of the deposition of high Pt content of nickel-platinum alloy thin film deposition, The lower nickel-platinum alloy film does not even contain Pt pure nickel film.Alloy Sputtering Target The formation of nickel-platinum silicide film on the surface of the low Pt content, help to reduce the overall resistance of nickel-platinum silicide, so in the new technology node, it is possible to use different Pt content of nickel-platinum alloy sputtering target The nickel platinum silicide contact film with a gradient structure was prepared.