Analysis Of Magnetic Field Arrangement Of Magnetron Metal Sputtering Targets

- Aug 01, 2017 -

  Analysis of magnetic field arrangement of magnetron Metal Sputtering Targets

  In recent decades, magnetron sputtering has become one of the most important methods of deposition coating. Widely used in industrial production and scientific research. As in the modern machining industry, the use of magnetron sputtering technology in the workpiece surface plating functional film, superhard film, self-lubricating film. In the field of optics, the use of magnetron sputtering technology to prepare anti-reflective film, low radiation film and transparent film, insulation film. In the field of microelectronics and optical, magnetic recording field magnetron sputtering technology also plays an important role. However, magnetron sputtering technology also has its own shortcomings, such as low target utilization, low deposition rate and low ionization rate. Metal Sputtering Targets The target utilization rate is due to the existence of the target runway, so that the plasma confinement in the target area of the local area, resulting in regional Metal Sputtering Targets. The shape of the runway is determined by the magnetic field structure behind the target. The key to improving the utilization of the target is to adjust the magnetic field structure, so that the plasma exists in the larger target surface range, to achieve the uniform surface sputtering. For magnetron sputtering, the sputtering yield can be increased by increasing the target power, but the target may be subject to melting and cracking due to thermal load. These problems can be made in the case of the same target area

  The sputtering area of the target surface is increased, resulting in a reduction in the power density of the target surface. So the magnetron sputtering cathode magnetic field design has been continuous improvement. Which is representative of such as: circular plane magnetron sputtering source, through the rational design of the magnetic field, so that the formation of the runway through the center of the target surface, Metal Sputtering Targets the use of mechanical transmission device rotating magnets to achieve the target surface of the full sputtering; rectangular plane magnetron Sputtering source, through the transmission mechanism to combine the magnets in the back of the target to do diamond-shaped or plum-shaped movement, so that the overall target utilization rate of 61%; through the multi-magnetic circuit with the adjustment to achieve the target surface low-pressure full etching. The structure of the magnetic field can also improve the uniformity of the film thickness. By adjusting the strength of the magnetic field ratio, and the development of non-equilibrium magnetron sputtering technology, but also has the function of ion plating. So the magnetic circuit design is the most important part of the magnetron sputtering source.

  Magnetic field arrangement of magnetron Metal Sputtering Targets

  In a planar magnetron Metal Sputtering Targets, the magnet is placed behind the target and the magnetic field passing through the surface of the target forms a magnetic field on the surface of the target. Wherein the magnetic field B parallel to the target surface and the electric field E of the vertical target surface form a drift field E × B parallel to the target surface. The drift field E × B has the effect of electrons on the traps, Metal Sputtering Targets thereby increasing the electron density of the target surface, increasing the probability of collision between the electrons and the neutral gas molecules, and increasing the ionization rate of the sputtering gas The sputtering rate.