Sputtering requirements are higher than those of traditional materials. General requirements such as size, flatness, purity, impurity content, density, N / O / C / S, grain size and defect control; higher requirements or special Requirements include: surface roughness, resistance, grain size uniformity, composition and organization uniformity, foreign matter (oxide) content and size, permeability, ultra-high density and ultra-fine grain and so on. Magnetron sputtering is a new type of physical vapor coating that uses electron gun systems to electronically emit and focus on the material being plated so that the sputtered atoms follow the momentum conversion principle with a higher kinetic energy from the material Fly to the substrate deposited film. This kind of plated material is called sputtering target. Sputtering targets are metals, alloys, ceramics, borides and the like.
Sputtering is one of the main techniques for the preparation of thin film materials. It uses ion generated by ion source to accelerate the aggregation in vacuum to form high velocity ion beam, bombard the solid surface, exchange kinetic energy between ions and solid surface atoms, So that the atoms on the solid surface away from the solid and deposited on the surface of the substrate, the bombardment of the solid is sputtering method of deposition of thin film of raw materials, known as sputtering target. Various types of sputtering thin film materials have been widely used in semiconductor integrated circuits, recording media, flat displays, and surface coating of workpieces.
The sputtering target is mainly used in electronic and information industry, such as integrated circuit, information storage, liquid crystal display, laser memory, electronic control devices, etc .; can also be used in the field of glass coating; can also be used in wear-resistant materials, , High-end decorative supplies and other industries.
Magnetron sputtering principle: in the sputtering target (cathode) and the anode between an orthogonal magnetic field and an electric field, in the high vacuum chamber filled with the required inert gas (usually Ar gas), permanent magnet in the target The surface of the material to form a magnetic field of 250 ~ 350 Gaussian, with the high voltage electric field composed of orthogonal electromagnetic field. Under the action of electric field, Ar gas ionization into positive ions and electrons, the target with a certain negative pressure, the electrons emitted from the target by the magnetic field and the role of the work of the ionization probability increases in the vicinity of the cathode to form a high density of plasma Body, Ar ions in the role of Lorentz force to accelerate the flight to the target surface, at a high speed bombardment of the target surface, so that the sputtering of the atom to follow the momentum conversion principle with a high kinetic energy from the target fly The substrate is deposited and deposited. Magnetron sputtering is generally divided into two kinds: tributary sputtering and RF sputtering, which tributary sputtering equipment is simple, in the sputtering of metal, its rate is also fast. The use of RF sputtering is more extensive, in addition to sputtering conductive material, but also sputtering non-conductive materials, while the Department of reactive sputtering preparation of oxides, nitrides and carbides and other compounds. If the RF frequency increases after becoming a microwave plasma sputtering, commonly used electronic cyclotron resonance (ECR) type microwave plasma sputtering.
Magnetron sputtering coating target:
Metal sputtering coating target, alloy sputtering coating target, ceramic sputtering coating target, boride ceramic sputtering target, carbide ceramic sputtering target, fluoride ceramic sputtering target, nitride ceramic sputtering Target, oxide ceramic target, selenide ceramic sputtering target, silicide ceramic sputtering target, sulfide ceramic sputtering target, telluride ceramic sputtering target, other ceramic target, chrome-doped Silicon ceramic target (Cr-SiO), indium phosphate target (InP), lead arsenide target (PbAs), indium arsenide target (InAs).