Oxide Sputtering Target Application Areas

- May 15, 2017 -

Oxide sputtering target Application areas

It is well known that the development trend of oxide sputtering target materials is closely related to the development trend of thin film technology in downstream application industry. With the application technology improvement in thin film products or components, the technology of oxide sputtering target should also change The Such as Ic manufacturers. Recently, the development of low-resistivity copper wiring is expected to replace the original aluminum film in the next few years, so that the development of oxide sputtering target and its required barrier target will be urgent. In addition, in recent years, flat panel display (F P D) significantly replaced the original cathode ray tube (CRT) -based computer monitors and TV market. Will also significantly increase ITO target technology and market demand. In addition to storage technology. High-density, high-capacity hard drives, high-density rewritable discs continue to increase. These have led to changes in the demand for the target industry. Below we will introduce the main application areas of the target, as well as the development trend of these targets.

Oxide sputtering target Microelectronics field

In all application industries, the semiconductor industry on the target sputtering film quality requirements are the most demanding. Now 12-inch (3 0 0 out of the mouth) of the silicon chip has been manufactured. While the width of the interconnect is decreasing. 

Oxide sputtering target The requirements of the wafer manufacturer for the target are large size, high purity, low segregation and fine grain, which requires that the fabricated oxide sputtering target has a better microstructure. The diameter and uniformity of the crystal particles of the oxide sputtering target are considered to be the key factors affecting the deposition rate of the film. In addition, the purity of the film is strongly related to the purity of the oxide sputtering target. The 99.995% (4 N5) purity copper target may meet the needs of the semiconductor manufacturer's 0.35pm process, but it can not meet the current 0.25um process Requirements, but not the rice 0.18um art even 0.13m process, the required target purity will be required to reach 5 or even 6N or more. Copper compared with aluminum, copper has a higher resistance to electromigration and lower resistivity, to meet! Conductor technology in the sub-micron wiring of 0.25um below the need but with rice other problems: copper and organic media, the adhesion strength is low. And prone to reaction, resulting in the use of the process of copper interconnection of the chip was broken and open circuit. In order to solve these problems, it is necessary to provide a barrier between the copper and the dielectric layer. The barrier layer material generally uses high melting point, high resistivity metal and its compound, so the barrier layer thickness is less than 50nm, with copper and dielectric material adhesion is good. Copper interconnection and aluminum interconnection of the barrier material are different. Need to develop new target materials. Copper interconnection of the barrier layer with oxide sputtering target include Ta, W, TaSi, WSi and so on. But Ta, W are refractory metal. Production is relatively difficult, and now is studying molybdenum, chromium and other gold as a substitute material.